--- 產(chǎn)品參數(shù) ---
- 型號(hào) NVMFS5C682NLAFT1G
- 廠家 ON
- 批號(hào) 22+
- 封裝 QFN
- 包裝 卷帶盤裝
--- 數(shù)據(jù)手冊(cè) ---
--- 產(chǎn)品詳情 ---
品牌
ON
封裝
DFN8
批次
21+
數(shù)量
10000
制造商
ON Semiconductor
產(chǎn)品種類
MOSFET
RoHS
是
安裝風(fēng)格
SMD/SMT
封裝 / 箱體
SO-FL-8
通道數(shù)量
1 Channel
晶體管極性
N-Channel
Vds-漏源極擊穿電壓
60 V
Id-連續(xù)漏極電流
25 A
Rds On-漏源導(dǎo)通電阻
21 mOhms
Vgs - 柵極-源極電壓
20 V
Vgs th-柵源極閾值電壓
2 V
Qg-柵極電荷
5 nC
最小工作溫度
- 55 C
最大工作溫度
+ 175 C
Pd-功率耗散
28 W
配置
Single
通道模式
Enhancement
資格
AEC-Q101
晶體管類型
1 N-Channel
正向跨導(dǎo) - 最小值
17 S
下降時(shí)間
1.5 ns
上升時(shí)間
12 ns
典型關(guān)閉延遲時(shí)間
12 ns
典型接通延遲時(shí)間
12 ns
可售賣地
全國(guó)
型號(hào)
NVMFS5C682NLAFT1G
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