--- 產(chǎn)品參數(shù) ---
- 具體型號 CGHV1F025S
- 功率 25 W
- 范圍 DC - 15 GHz,
- 電壓 40 V
- 類型 GaN HEMT
--- 產(chǎn)品詳情 ---
CGHV1F025S
Package Type: 3x4 DFNPN: CGHV1F025S25 W, DC - 15 GHz, 40 V, GaN HEMTDescriptionWolfspeed’s
CGHV1F025S is an unmatched, gallium nitride (GaN) high electronmobility transistor (HEMT) designed specifically for high efficiency, high gain andwide bandwidth capabilities. The device can be deployed for L-, S-, C-, X- andKu-Band amplifier applications. The datasheet specifications are based on aX-Band (8.9 - 9.6 GHz) amplifier. The CGHV1F025S operates on a 40 volt rail circuitwhile housed in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package.Under reduced power, the transistor can operate below 40V to as low as 20V VDD,maintaining high gain and efficiency.
![](https://file1.elecfans.com/web2/M00/AC/D6/wKgaomVJ4b2AcIzLAADabTg1EvE872.png)
![](https://file1.elecfans.com/web2/M00/AC/D6/wKgaomVJ4bSAGIVNAAFgLYy4akw374.png)
![](https://file1.elecfans.com/web2/M00/AC/D6/wKgaomVJ4aiAJ6NoAAC3JARqu6A669.png)
![](https://file1.elecfans.com/web2/M00/AC/D6/wKgaomVJ4ZGAXZgoAAEdOCYAr10831.png)
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